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PRELIMINARY
RT3CLLM
Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type
DESCRIPTION
RT3CLLM is a compound transistor built with two 2SC3052 chips in SC-88 package.
OUTLINE DRAWING
2.1 1.25 0.65 0.2
Unitmm
FEATURE
Silicon npn epitaxial type Each transistor elements are independent. Mini package for easy mounting
2.0
APPLICATION
For low frequency amplify application
0.65
0.65
00.1
Tr1 Tr2
TERMINAL CONNECTOR EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 :COLLECTOR1 JEITASC-88
MAXIMUM RATING (Ta=25)
SYMBOL VCBO VEBO VCEO IC PCTotal Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipationTa=25 Junction temperature Storage temperature RATING 50 6 50 200 150 125 -55125 UNIT V V V mA mW
6 5 4
MARKING
.C L L
2 3
ISAHAYA ELECTRONICS CORPORATION
0.13
0.9
PRELIMINARY
RT3CLLM
Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol V(BR)CEO ICBO IEBO hFE* hFE VCE(sat) fT Cob NF Parameter Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance Noise figure Test conditions IC=100A,RBE= VCB =50V,IE=0 VEB=6V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=0.1mA IC=100mA,IB=10mA VCE=6V,IE=-10mA VCB=6V,IE=0,f=1MHZ VCE=6V,IE=-0.1mA,f=1kHZ,RG=2k Limits Min 50 150 90 Typ 200 2.5 Max 0.1 0.1 800 0.3 15 Unit V A A V MHZ pF dB
* : It shows hFE classification in right table. Item hFE E 150300 F 250500 G 400800
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3CLLM
Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT 50 0.16mA 50 0.14mA 0.12mA 0.10mA 30 0.08mA 0.06mA 0.04mA 10 0.02mA IB=0 0 0 1 2 3 4 5 COLLECTOR EMITTER VOLTAGE VCE(V) Ta=25 COLLECTOR CURRENT IC(mA) 40 Ta=25 VCE=6V COMMON EMITTER TRANSFER
COLLECTOR CURRENT IC(mA)
40
30
20
20
10
0 0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) 1
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE
GAIN BAND WIDTH PRODUCT fT(MHz) 250
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25 VCE=6V 200
Ta=25 VCE=6V 100(@IC=1mA) 1000
150
100
100
10
50
1 0.1 1 10 100 1000 COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25 IE=0 f=1MHz 10
0 -0.1
-1 -10 EMITTER CURRENT IE(mA)
-100
1
0.1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003

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